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BF975NF75B - 75V N-Channel MOSFET

General Description

This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge.

It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications.

Key Features

  • z z z z z z VDS =75 V ID =80A Typical RDS(ON)=7.5m Ω (VGS=10V,ID=40A) Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings Symbol VDS ID IDM VGS EAS IAR EAR dv/dt PD TJ,Tstg TL Parameter Drain-Source Voltage Drain Current(continuous)at Tc=25℃ Drain Current (pulsed) Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) Operating junction and Storage Temperature Ran.

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Datasheet Details

Part number BF975NF75B
Manufacturer BYD Microelectronics
File Size 244.81 KB
Description 75V N-Channel MOSFET
Datasheet download datasheet BF975NF75B Datasheet

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BF975NF75B BYD Microelectronics Co., Ltd. 75V N-Channel MOSFET General Description This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. Features z z z z z z VDS =75 V ID =80A Typical RDS(ON)=7.