BF975NF75B - 75V N-Channel MOSFET

BYD Microelectronics

Datasheet Details

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z z z z z z VDS =75 V ID =80A Typical RDS(ON)=7.5m Ω (VGS=10V,ID=40A) Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings Symbol VDS ID IDM VGS EAS IAR EAR dv/dt PD TJ,Tstg TL Parameter Drain-Source Voltage Drain Current(continuous)at Tc=25℃ Drain Current (pulsed) Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) Operating junction and Storage Temperature Ran.

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