BF975NF75B Datasheet | BYD Microelectronics

Description This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Tele and puter applications. It is also intended for any applications with low gate drive requirements. Features z z z z z z VDS =75 V ID =80A Typical RDS(ON)=7.5m Ω (VGS=10V,ID=40A) Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings Symbol VDS ID IDM VGS EAS IAR EAR dv/dt PD TJ,Tstg TL Parameter Drain-Source Voltage Drain Current(continuous)at Tc=25℃ Drain Current (pulsed) Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) Operating junction and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose （Note2） （Note1） （Note1） （Note3） （Note1） Value 75 80 320 ±20 800 35 18 11 210 -55 to +175 300 Unit V A A V m J A m J V/ns W ℃ ℃ TS-MOS-PD-0037 Rev.A/2 Page 1 of 6 BYD Microelectronics Co., Ltd. Package TO-220 Packaging Tube Ordering Information Part Number BF975NF75B Thermal Data Symbol Rthj-Case Rthj-Amb Parameter Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max. 0.6 63.0 Unit ℃/W ℃/W Electrical Characteristics(Tc = 25℃) Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD(- ) Trr Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Forward On Voltage Reverse Recovery Time ISD=25A ,VGS=0V VDD=37.5V,IF=80A,di/dt=100A/us （Note4） 70 VDD=60V, ID=80A VGS=10V （Note4， 5） VDD=37.5V, RL=15Ω VGS=10V ,RG=10Ω （Note4，5）...