z VDS =500 V z ID=5A z RDS(ON)≤1.60Ω TYP(VGS=10V,ID=2.5A) z Low CRSS (typical 7.8 pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Volta.

These N-Channel enhancement mode power field effect transistors are produced using VDMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ene.

BF95N50L

BF959

BF900

BF901

BF901R

BF9024SPD-M

BF9028DND-A

BF9028DND-GE

BF9028DNT

BF90315SNS

BF9035SNZ-M

BF9038DNS-A

BF904

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts