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BPM0605CG - 60V Complementary MOSFET

Description

The BPM0605CG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • N channel.
  • VDS =60V, ID =6.3A RDS(ON).

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Datasheet Details

Part number BPM0605CG
Manufacturer BPS
File Size 857.32 KB
Description 60V Complementary MOSFET
Datasheet download datasheet BPM0605CG Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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General Description The BPM0605CG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features N channel  VDS =60V, ID =6.3A RDS(ON) <30mΩ @ VGS=10V P channel  VDS =-60V, ID =-5A RDS(ON) <80mΩ @ VGS=-10V  High power and current handing capability  Lead free product is acquired  Surface mount package Application Typical Application BPM0605CG 60V Complementary MOSFET  H-bridge  Inverters Ordering Information Figure 1. Schematic Diagram Part Number Package Operating Temperature Packing Type BPM0605CG SOP-8 -40 ℃ to 105 ℃ Tape&Reel 4,000pcs/Reel Marking BPM0605 XXXXXY CGXWW BPM0605CG_EN_DS_Rev.1.0 www.bpsemi.
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