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BPM0405CG - 40V Complementary MOSFET

Description

The BPM0405CG uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs can be used in a wide variety of applications.

Features

  • N-Channel VDS =40V, ID =8A RDS(ON) < 19mΩ @ VGS=10V RDS(ON) < 29mΩ @ VGS=4.5V.
  • P-Channel VDS =-40V, ID = -7A RDS(ON).

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Datasheet Details

Part number BPM0405CG
Manufacturer BPS
File Size 769.51 KB
Description 40V Complementary MOSFET
Datasheet download datasheet BPM0405CG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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General Description The BPM0405CG uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications. Features  N-Channel VDS =40V, ID =8A RDS(ON) < 19mΩ @ VGS=10V RDS(ON) < 29mΩ @ VGS=4.5V  P-Channel VDS =-40V, ID = -7A RDS(ON) <35mΩ @ VGS=-10V RDS(ON) < 45mΩ @ VGS=-4.5V  High power and current handing capability Typical Application BPM0405CG 40V Complementary MOSFET Application  H-bridge  Inverters Ordering Information N-channel P-channel Figure 1. Schematic Diagram Part Number Package Operating Temperature Packing Type BPM0405CG SOP-8 -40 ℃ to 105 ℃ Tape & Reel 4,000pcs/Reel Marking BPM0405 XXXXXY CGXWW BPM0405CG_EN_DS_Rev.1.0 www.bpsemi.
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