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BPM0303CS - 30V Complementary MOSFET

Description

The BPM0303CS uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs can be used in a wide variety of applications.

Features

  • N-Channel VDS =30V, ID =3.5A RDS(ON) < 58mΩ @ VGS=10V RDS(ON) < 95mΩ @ VGS=4.5V.
  • P-Channel VDS =-30V, ID = -2.7A RDS(ON) < 100mΩ @ VGS=-10V RDS(ON) < 150mΩ @ VGS=-4.5V.
  • High power and current handing capability Typical.

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Datasheet Details

Part number BPM0303CS
Manufacturer BPS
File Size 799.32 KB
Description 30V Complementary MOSFET
Datasheet download datasheet BPM0303CS Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BPM0303CS 30V Complementary MOSFET General Description The BPM0303CS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications. Features  N-Channel VDS =30V, ID =3.5A RDS(ON) < 58mΩ @ VGS=10V RDS(ON) < 95mΩ @ VGS=4.5V  P-Channel VDS =-30V, ID = -2.7A RDS(ON) < 100mΩ @ VGS=-10V RDS(ON) < 150mΩ @ VGS=-4.5V  High power and current handing capability Typical Application Application  H-bridge  Inverters Ordering Information N-channel P-channel Figure 1. Schematic Diagram Part Number Package Operating Temperature Packing Type BPM0303CS SOT23-6L -40 ℃ to 105 ℃ Tape & Reel 3,000pcs/Reel Marking 0303 BPM0303CS_EN_DS_Rev.1.0 www.bpsemi.
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