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BP0405SCG - 40V Complementary MOSFET

Description

The BP0405SCG uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs can be used in a wide variety of applications.

Features

  • N-Channel VDS =40V, ID =6A RDS(ON) < 26mΩ @ VGS=10V.
  • P-Channel VDS =-40V, ID =-5A RDS(ON) < 60mΩ @ VGS=-10V.
  • High power and current handing capability.

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Datasheet Details

Part number BP0405SCG
Manufacturer BPS
File Size 1.41 MB
Description 40V Complementary MOSFET
Datasheet download datasheet BP0405SCG Datasheet

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Full PDF Text Transcription (Reference)

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BP0405SCG 40V Complementary MOSFET Description The BP0405SCG uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications. Features  N-Channel VDS =40V, ID =6A RDS(ON) < 26mΩ @ VGS=10V  P-Channel VDS =-40V, ID =-5A RDS(ON) < 60mΩ @ VGS=-10V  High power and current handing capability Applications  H-bridge  Inverters Typical Application D1 D2 G1 NMOS S1 G2 PMOS S2 Figure 1. Schematic Diagram BP0405SCG_EN_DS_Rev.0.9 www.bpsemi.
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