TIPP116 Datasheet | Bourns

TIPP115, TIPP116, TIPP117 PNP SILICON POWER DARLINGTONS - 20 W Pulsed Power Dissipation - 100 V Capability - 2 A Continuous Collector Current - 4 A Peak Collector Current LP PACKAGE (TOP VIEW) E 1 3 B MDTRAB absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL TIPP115 Collector-base voltage (IE = 0) VCBO TIPP117 OBSOLETE Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Pulsed power dissipation (see Note 3) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C. 3. VCE = 20 V, IC = 1 A, PW = 10 ms, duty cycle ≤ 2%. TIPP115 TIPP116 TIPP117 VCEO VEBO IC ICM IB Ptot PT Tj Tstg TL VALUE -60 -80 -100 -60 -80 -100 -5 -2 -4 -50 0.8 20 -55 to +150 -55 to +150 260 UNIT V A A m A W W °C °C °C PRODUCT INFORMATION MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIPP115, TIPP116, TIPP117 PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX Collector-emitter V(BR)CEO breakdown voltage IC = -10 m A (see Note 4) IB = 0 TIPP115 TIPP116...