PESD3V3S1BA-N Overview
Key Features
- 100Watts peak pulse power (tp =8/20μs)
- Bidirectional configurations
- Solid-state silicon-avalanche technology
- Low clamping voltage
- Low leakage current
- IEC 61000-4-4 (EFT) 40A(5/50ns)
| Part | PESD3V3S1BA-N |
|---|---|
| Description | ESD Protection Diode |
| Category | Diode |
| Manufacturer | BORN |
| Size | 702.85 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| PESD3V3S1UB | Nexperia | ESD protection diode |
| PESD3V3S1UB | NXP Semiconductors | ESD PROTECTION DIODES IN SOD 523 PACKAGE |
| PESD3V3S1UL | NXP Semiconductors | Unidirectional ESD protection diodes |
| PESD3V3S2UT | NXP Semiconductors | Double ESD protection diodes |
| PESD3V3S2UAT | NXP Semiconductors | Double ESD protection diodes in SOT23 package |