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PESD3V3S1BA-N - ESD Protection Diode

Key Features

  • 100Watts peak pulse power (tp =8/20μs).
  • Bidirectional configurations.
  • Solid-state silicon-avalanche technology.
  • Low clamping voltage.
  • Low leakage current.
  • IEC 61000-4-2 ±25kV contact ±25kV air.
  • IEC 61000-4-4 (EFT) 40A(5/50ns).
  • IEC 61000-4-5 (Lightning) 10A(8/20μs) PESD3V3S1BA-N ESD Protection Diode ».

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Datasheet Details

Part number PESD3V3S1BA-N
Manufacturer BORN
File Size 702.85 KB
Description ESD Protection Diode
Datasheet download datasheet PESD3V3S1BA-N Datasheet

Full PDF Text Transcription for PESD3V3S1BA-N (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PESD3V3S1BA-N. For precise diagrams, and layout, please refer to the original PDF.

»Features ■ 100Watts peak pulse power (tp =8/20μs) ■ Bidirectional configurations ■ Solid-state silicon-avalanche technology ■ Low clamping voltage ■ Low leakage current ...

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con-avalanche technology ■ Low clamping voltage ■ Low leakage current ■ IEC 61000-4-2 ±25kV contact ±25kV air ■ IEC 61000-4-4 (EFT) 40A(5/50ns) ■ IEC 61000-4-5 (Lightning) 10A(8/20μs) PESD3V3S1BA-N ESD Protection Diode »Applications ■ Microprocessor based equipment ■ Personal Digital Assistants (PDA’s) ■ Notebooks, Desktops, and Servers ■ Portable Instrumentation ■ Pagers Peripherals »Mechanical Data ■ SOD523 package ■ Molding compound flammability rating: UL 94V-0 ■ Packaging: Tape and Reel ■ RoHS/WEEE Compliant »Schematic & PIN Configuration Revision 2018 SOD-523 www.born-tw.