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PESD12VL2BT-N

PESD12VL2BT-N is ESD Protection Diode Array manufactured by BORN.

PESD12VL2BT-N datasheet preview

PESD12VL2BT-N Datasheet

Part number	PESD12VL2BT-N
Download	PESD12VL2BT-N Datasheet (PDF)
File Size	597.91 KB
Manufacturer	BORN
Description	ESD Protection Diode Array

Similar Part Number

Manufacturer	Part Number	Description
NXP Semiconductors	PESD12VL2BT	Low capacitance double bidirectional ESD protection diodes
Nexperia	PESD12VL2BT	Low capacitance double bidirectional ESD protection diode
Kexin Semiconductor	PESD12VL2BT	ESD Protection Diodes

PESD12VL2BT-N Distributor

PESD12VL2BT-N Description

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PESD12VL2BT-N Key Features

350 Watts peak pulse power (tp =8/20μs)
Bidirectional configurations
Solid-state silicon-avalanche technology
Low clamping voltage
Low leakage current
IEC 61000-4-2 ±30kV contact ±30kVair
IEC 61000-4-4 (EFT) 40A(5/50ns)
IEC 61000-4-5 (Lightning) 12A(8/20μs)

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