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BLUE ROCKET ELECTRONICS

SI2312 Datasheet Preview

SI2312 Datasheet

N-CHANNEL MOSFET

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SI2312
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 N MOS 场效应管。N- CHANNEL MOSFET in a SOT-23 Plastic Package.
特征 / Features
沟道场效应管。
Trench FET Power MOSFET.
用途 / Applications
高速开关。
High speed switch.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2
1
PIN1S
PIN 2G
PIN 3D
印章代码 / Marking
Marking
C2H
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BLUE ROCKET ELECTRONICS

SI2312 Datasheet Preview

SI2312 Datasheet

N-CHANNEL MOSFET

No Preview Available !

SI2312
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Pulsed Drain Current
Continuous Source Current
Power Dissipation
Storage Temperature Range
Junction-to-Ambient
符号
Symbol
VDSS
VGSS
ID
IDM
IS
PD
Tstg
RθJA
数值
Rating
20
±8
4.5
15
1.0
1.25
-55150
100
单位
Unit
V
V
A
A
A
W
/W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Static Drain–Source
On–Resistance
Zero Gate Voltage Drain Current
Gate–Body Leakage.
State Drain Current
Drain–Source Diode Forward
Voltage
Forward Transconductance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Source-Drain Reverse Recovery
Time
符号
Symbol
V(BR)DSS
VGS(th)
RDS(on)1
RDS(on)2
RDS(on)3
IDSS(1)
IDSS(2)
IGSS
ID(ON)
VSD
gFS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
测试条件
Test Conditions
VGS=0V
ID=-250μA
VDS=VGS
ID=250μA
VGS=4.5V ID=5A
VGS=2.5V ID=4.5A
VGS=1.8V ID=4A
VDS=20V
VDS=20V
Tj=70
VGS=±8V
VGS=0V
VGS=0V
VDS=0V
VDS10V VGS=4.5V
最小值
Min
20
0.5
15
典型值
Typ
0.65
27
33
42
IS=1A
VGS=0V
0.8
VDS=15V
VDS=10V
ID=5A
ID=5A
VGS=4.5V
40
11.2
1.4
2.2
VDD=10V
ID1A
RG=6
RL=10
VGEN=4.5V
IF=1.0A
di/dt=100A/μs
15
40
48
31
13
最大值
Max
1.2
33
40
51
1
75
±100
1.2
14
25
60
70
45
25
单位
Unit
V
V
m
μA
μA
nA
A
V
S
nC
ns
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Part Number SI2312
Description N-CHANNEL MOSFET
Maker BLUE ROCKET ELECTRONICS
Total Page 6 Pages
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