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BLUE ROCKET ELECTRONICS

SI2302 Datasheet Preview

SI2302 Datasheet

N-CHANNEL MOSFET

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SI2302
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 N 沟道 MOS 场效应管。N- CHANNEL MOSFET in a SOT-23 Plastic Package.

特征 / Features
芯片采用超高密度圆胞设计技术,RDS(ON)导通电阻小,SOT-23 封装。
Super high dense cell design for low RDS(ON),SOT-23 package.
用途 / Applications
电池管理,高速开关,低功率 DC-DC 转换。
Battery management,High speed switch,low power DC to DC converter.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2
1
PIN1S
PIN 2G
PIN 3D
印章代码 / Marking
Marking
A2H
http://www.fsbrec.com
1/6




BLUE ROCKET ELECTRONICS

SI2302 Datasheet Preview

SI2302 Datasheet

N-CHANNEL MOSFET

No Preview Available !

SI2302
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Pulsed Drain Current
Continuous Source Current
Power Dissipation
Storage Temperature Range
符号
Symbol
VDSS
VGSS
ID
IDM
IS
PD
Tstg
数值
Rating
20
±8
3.0
10
0.95
0.9
-55150
单位
Unit
V
V
A
A
A
W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage.
Static Drain–Source
On–Resistance
Forward Transconductance
Drain–Source Diode Forward
Voltage
Gate Threshold Voltage
State Drain Current
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
符号
Symbol
V(BR)DSS
IDSS
IGSS
RDS(on)1
RDS(on)2
gFS
VSD
VGS(th)
ID(on)
td(on)
tr
td(off)
tf
测试条件
Test Conditions
VGS=0
ID=10μA
VGS=0
VDS=20V
VGS=±8V VDS=0V
VGS=4.5V ID=3.6A
VGS=2.5V ID=3.1A
VDS=5V
ID=3.6A
VGS=0V
ID=1.25A
VDS=VGS
VDS=5V
ID=50μA
VGS=2.5V
VDD=10V
VGEN=4.5V
RGEN=6
ID=3.6A
RL=2.8
最小值 典型值 最大值 单位
Min Typ Max Unit
20 V
1.0 μA
±100 nA
60 m
115 m
8S
0.75 1.2 V
0.50
4
7
55
15
10
1.0 V
A
ns
http://www.fsbrec.com
2/6


Part Number SI2302
Description N-CHANNEL MOSFET
Maker BLUE ROCKET ELECTRONICS
Total Page 6 Pages
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