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CS10N60F - N-CHANNEL MOSFET

Features

  • Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 600 V ID(Tc=25℃) 9.5 A ID(Tc=100℃) 5.7 A IDM 38 A VGSS ±20 V EAS 700 mJ EAR 15.6 mJ IAR 9.5 A RθJC 2.5 ℃/W RθJA 62.5 ℃/W PD(Tc=25℃) 50 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions Min Typ Max BVDSS VGS=0V ID=250μA 600 IDSS VDS=600V VDS=480V VGS=0V TC=125℃ IGSS VGS=±20V VDS=0V 1.0 10 ±10 VGS(th) VDS=VGS I.

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Datasheet Details

Part number CS10N60F
Manufacturer BLUE ROCKET ELECTRONICS
File Size 275.53 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet CS10N60F Datasheet
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Full PDF Text Transcription

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BRF10N60(CS10N60F) N-CHANNEL MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,,。 Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 600 V ID(Tc=25℃) 9.5 A ID(Tc=100℃) 5.7 A IDM 38 A VGSS ±20 V EAS 700 mJ EAR 15.6 mJ IAR 9.5 A RθJC 2.5 ℃/W RθJA 62.5 ℃/W PD(Tc=25℃) 50 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions Min Typ Max BVDSS VGS=0V ID=250μA 600 IDSS VDS=600V VDS=480V VGS=0V TC=125℃ IGSS VGS=±20V VDS=0V 1.0 10 ±10 VGS(th) VDS=VGS ID=250μA 2.0 4.
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