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2SC1957(3DG1957)
NPN /SILICON NPN TRANSISTOR
:。
Purpose: Large signal output amplifier.
/Absolute maximum ratings(Ta=25℃)
Symbol
Rating
Unit
VCBO
75
V
VCEO
40
V
VEBO
4.0
V
IC
1.0
A
PC(Ta=25℃)
0.75
W
PC(Tc=25℃)
5.0
W
Tj
150
℃
Tstg
-55～150 ℃
/Electrical characteristics(Ta=25℃)
Symbol
Test condition
ICBO hFE VCE(sat) fT Cob PO ηC
VCB=40V VCE=10V IC=500mA VCE=10V VCB=10V IE=0 VCC=12V Pj=35mW
IE=0 IC=0.5A IB=50mA IC=150mA f=1.0MHz f=27MHz
Min
20
150
1.0 60
Rating
Typ
90 0.3 250 14 1.8
Max
1.0 200 0.5
20
Unit
μA
V MHz pF W %
hFE /hFE classifications: S:30～60 R:45～90 Q:80～200 K:20～200
FOSHAN BLUE ROCKET ELECTRONICS CO., LTD.
C1957 Datasheet
