BRM501D mosfet equivalent, n-channel mosfet.
ESD ，（VGS(th)-1.8V）。 ESD Improved capability, Depletion mode(VGS(th)=-1.8V,type).
/ Applications 。 This device is suitable for load switch of high voltage.
/ Equival.
。 This device is suitable for load switch of high voltage.
/ Equivalent Circuit
/ Pinning
3
2 1
PIN1：S
PIN 2：G
PI.
SOT-23 N MOS 。N- CHANNEL MOSFET in a SOT-23 Plastic Package.
/ Features
ESD ，（VGS(th)-1.8V）。 ESD Improved capability, Depletion mode(VGS(th)=-1.8V,type).
/ Applications 。 This device is suitable for load switch of high voltage.
/ Equivalent.
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