BRG10N120D transistor equivalent, insulated-gate bipolar transistor.
，，，。 Built in fast recovery diode, High reliability and thermal stability parameters, Low switching loss, Low saturation voltage.
/ Applications
。 Eddy-current heatin.
。 Eddy-current heating.
/ Equivalent Circuit
/ Pinning
1 2 3
PIN1：Gate
PIN 2：Collector
PIN 3：Emitter
/ hFE Cl.
TO-3P 。Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package.
/ Features
，，，。 Built in fast recovery diode, High reliability and thermal stability parameters, Low switching loss, Low saturation voltage.
/ Applications
。 Eddy-current h.
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