BR8810MF mosfet equivalent, n-channel double mosfet.
， RDS(on)，。 advanced trench technology to provide excellent RDS(on), low gate charge. VDSS=20V／VGSS=±12V ID=7A RDS(ON)=16mΩ(typ.)@VGS=4.5V RDS(ON)=19mΩ(typ.)@VGS=2.5V RD.
，PWM 。 Use as Load Switch or PWM application.
/ Equivalent Circuit
DATA SHEET
/ Pinning
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1 2 3
6 5
4
/ Mar.
SOT23-6 N MOS 。 ESD 。 N-channel Double MOSFET in a SOT23-6 Plastic Package. It is ESD protested.
/ Features ， RDS(on)，。 advanced trench technology to provide excellent RDS(on), low gate charge. VDSS=20V／VGSS=±12V ID=7A RDS(ON)=16mΩ(typ.)@VGS=4..
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