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BLUE ROCKET ELECTRONICS

BR8205 Datasheet Preview

BR8205 Datasheet

N-CHANNEL DOUBLE MOSFET

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BR8205
Rev.D Nov.-2016
DATA SHEET
描述 / Descriptions
SOT23-6 塑封封装 N 沟道双 MOS 管。N-channel Double MOSFET in a SOT23-6 Plastic Package.
特征 / Features
采用先进的沟槽技术,提供较小的导通电阻 RDS(on),低栅极电荷,栅极工作电压低至 2.5V。
advanced trench technology to provide excellent RDS(on), low gate charge and operation with gate
voltages as low as 2.5V.
用途 / Applications
适用于电池保护电路,开关电路。
Use as a Battery protection , Switching application.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
1
2
3
6
5
4
印章代码 / Marking
Marking
8205
http://www.fsbrec.com
1/6




BLUE ROCKET ELECTRONICS

BR8205 Datasheet Preview

BR8205 Datasheet

N-CHANNEL DOUBLE MOSFET

No Preview Available !

BR8205
Rev.D Nov.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Drain-Source Voltage
Drain Current - Continuous
Drain Current - Continuous
Drain Current – Pulsed
Gate-Source Voltage
Maximum Power Dissipation
Thermal Resistance Junction-to-Ambient
Junction Temperature
Storage Temperature Range
符号
Symbol
VDS
ID(Ta=25)
ID(Ta=70)
IDM
VGS
PD(Ta=25)
RθJA
Tj
Tstg
DATA SHEET
数值
Rating
20
6
4.8
20
±8.0
1.14
110
150
-55150
单位
Unit
V
A
A
A
V
W
/ W
电性能参数 / Electrical Characteristics(Ta=25)

参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值 典型值 最大值 单位
Min Typ Max Unit
Drain-Source Breakdown Voltage
Drain-Source Leakage
Current(Tj=25)
Drain-Source Leakage
Current(Tj=70)
Gate-Source Leakage Current
BVDSS
IDSS
VGS=0V
VDS=20V
IDSS
IGSS
VDS=16V
VGS=±10V
ID=250μA
VGS=0V
VGS=0V
VDS=0V
20
V
1 μA
25
±100
μA
nA
Gate Threshold Voltage
VGS(th) VDS=VGS
ID=250μA 0.5
1.2 V
Static Drain-Source On-Resistance RDS(on)
VGS=4.5V
VGS=2.5V
ID=6.0A
ID=5.2A
24 m
30 m
Forward Transconductance
gFS VDS=10V ID=6.0A
20 S
Forward On Voltage
VSD VGS=0V
IS=1.7A
1.2 V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS=20V
f=1.0MHz
VGS=0V
1035
320
150
pF
pF
pF
Turn-on Delay Time
td(on)
30
Rise Time
Turn-off Delay Time
tr
td(off)
VDS=10V
VGS=5V
RD=10
ID=1A
RG=6
70
40
Fall Time
tf
65
注/Notes: 
1、面装在FR4板,t≤10秒。Surface Mounted on FR4 Board, t 10 sec.  
2、冲测试:脉冲宽度≤300μs,占空比≤2%。Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
ns
ns
ns
ns
http://www.fsbrec.com
2/6


Part Number BR8205
Description N-CHANNEL DOUBLE MOSFET
Maker BLUE ROCKET ELECTRONICS
Total Page 6 Pages
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