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BLUE ROCKET ELECTRONICS

2N7002 Datasheet Preview

2N7002 Datasheet

N-CHANNEL MOSFET

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2N7002
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a SOT-23 Plastic Package.
特征 / Features
灵敏的控制级触发电流和很低的维持电流,内置静电保护二极管.
Sensitive gate trigger current and Low Holding current.ESD protected diode.
用途 / Applications
用作一般的开关和相位控制。
Intended for use in general purpose switching and phase control applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2
1
PIN1S
PIN 2G
PIN 3D
印章代码 / Marking
Marking
H702
http://www.fsbrec.com
1/6




BLUE ROCKET ELECTRONICS

2N7002 Datasheet Preview

2N7002 Datasheet

N-CHANNEL MOSFET

No Preview Available !

2N7002
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Maximum Drain Current - Continuous
Maximum Drain Current - Pulsed
Gate-Source Voltage - Continuous
Maximum Power Dissipation
Storage Temperature Range
符号
Symbol
VDSS
VDGR
ID
IDM
VGSS
PD
Tstg
DATA SHEET
数值
Rating
60
60
250
800
±20
350
-55150
单位
Unit
V
V
mA
mA
V
mW
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
符号
Symbol
V(BR)DSS
IDSS
Zero Gate Voltage Drain Current
IDSS
Gate - Body Leakage
IGSS
Static Drain-Source On-Resistance RDS(on)(1)
RDS(on)(2)
Forward Transconductance
Drain-Source Diode Forward
Voltage
gFS
VSD
Gate Threshold Voltage
VGS(th)
On-State Drain Current
ID(on)
Drain-Source On-Voltage
VDS(on)(1)
VDS(on)(2)
Turn-On Time
Turn-Off Time
td(on)
td(off)
测试条件
Test Conditions
VGS=0
VGS=0
Tj=25
VGS=0
Tj=125
ID=10μA
VDS=60V
VDS=60V
VGS=±20V VDS=0V
VGS=10V ID=0.5A
VGS=5V
ID=0.05A
VDS=10V ID=0.2A
VGS=0V
IS=250mA
VDS=VGS
ID=250μA
VDS2.0VDS(on)
VGS=10V
VGS=10V ID=500mA
VGS=5.0V
VDD=25V
ID=500mA
RL=25
ID=50mA
RG=25
Vgen=10V
最小值 典型值 最大值 单位
Min Typ Max Unit
60 V
1.0 μA
500 μA
±10 nA
5
5.5
80 mS
1.5 V
1.0 2.5 V
500 mA
2.5 V
0.27
5
V
20 ns
40 ns
http://www.fsbrec.com
2/6


Part Number 2N7002
Description N-CHANNEL MOSFET
Maker BLUE ROCKET ELECTRONICS
Total Page 6 Pages
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