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BP3318 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The BP3318 utilized advanced processin gtechni ques to achieve the lowest possible on-resistance, extremel y efficient and cost-effectiveness device.

The TO-252 package is universally used for commercial-industrial applications.

Features

  • Simple Drive Requirement.
  • Lower Gate Charge.
  • Fast Switching Package Dimensions TO-252 3318 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Total Power Di.

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Datasheet Details

Part number BP3318
Manufacturer BETTER POWER
File Size 177.36 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet BP3318 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BETTER POWER BP3318 BP3318 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 50mȍ -20A Description The BP3318 utilized advanced processin gtechni ques to achieve the lowest possible on-resistance, extremel y efficient and cost-effectiveness device. The TO-252 package is universally used for commercial-industrial applications. Features *Simple Drive Requirement *Lower Gate Charge *Fast Switching Package Dimensions TO-252 3318 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.
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