BLM9435 mosfet equivalent, p-channel enhancement mode power mosfet.
VDS VGS －30V ±20V
RDSon TYP 51mR@-10V
68mR@-4V5
ID －5.4A
DESCRIPTION
This device is produced with high cell density, DMOS trench technology, which is especially used .
* Load Switch
* TFT panel power switch
* DCDC conversion
Pin Configuration
Packaging Information
Page 1
V.
This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other ba.
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