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BLM4435 Datasheet, BELLING

BLM4435 mosfet equivalent, p-channel enhancement mode power mosfet.

BLM4435 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 267.20KB)

BLM4435 Datasheet
BLM4435
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 267.20KB)

BLM4435 Datasheet

Features and benefits


* VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V D G S Schematic diagram
* High Power and current handing capability
* Lead free.

Description

The BLM4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES
* VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V D G S Schema.

Image gallery

BLM4435 Page 1 BLM4435 Page 2 BLM4435 Page 3

TAGS

BLM4435
P-Channel
Enhancement
Mode
Power
MOSFET
BELLING

Manufacturer


BELLING

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