BLM3415 Datasheet PDF - BELLING P-Channel Enhancement Mode Power MOSFET Specs

BLM3415 - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The BLM3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Features

VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 47mΩ @ VGS=-4.5V ESD Rating: 2500V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface mount package.

Datasheet Details

Part number	BLM3415
Manufacturer	BELLING
File Size	423.31 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	BLM3415 Datasheet
Additional preview pages of the BLM3415 datasheet.

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Full PDF Text Transcription

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Pb Free Product BLM3415 P-Channel Enhancement Mode Power MOSFET Description The BLM3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 47mΩ @ VGS=-4.

Published: Jul 19, 2015 |