Datasheet Details
| Part number | B1D08065E |
|---|---|
| Manufacturer | BASiC Semiconductor |
| File Size | 284.14 KB |
| Description | SiC Schottky Diode |
| Datasheet |
 B1D08065E Datasheet
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Description
of Changes Release of the datasheet.
Characteristics updated.
Characteristics updated.
Features
- Extremely low reverse current.
- No reverse recovery current.
- Temperature independent switching.
- Positive temperature coefficient on V F.
- Excellent surge current capability.
- Low capacitive charge Benefits.
- Essentially no switching losses.
- System efficiency improvement over Si diodes.
- Increased power density.
- Enabling higher switching frequency.
- Reduction of heat sink requirements.
- System cost savings due to smaller magnetics.