AT-64023 transistor equivalent, up to 4 ghz linear power silicon bipolar transistor.
* High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz
* High Gain at 1 dB Compression: 12.5 dB Typical G1 dB at 2.0 GHz 9.5 d.
operating over VHF, UHF and microwave frequencies. Excellent device uniformity, performance and reliability are produced.
The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed for use in medium power, wide band amplifier and oscillator applications operating ov.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 71.95KB)