1N5712 diodes equivalent, schottky barrier diodes.
* Low Turn-On Voltage As Low as 0.34 V at 1 mA
* Pico Second Switching Speed
* High Breakdown Voltage Up to 70 V
* Matched Characteristics Available
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Description/Applications
The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which us.
Applications
The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting.
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