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Austin Semiconductor

MT5C2568 Datasheet Preview

MT5C2568 Datasheet

32K x 8 SRAM

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Austin Semiconductor, Inc.
SRAM
MT5C2568
AS5C2568
32K x 8 SRAM
SRAM MEMORY ARRAY
PIN ASSIGNMENT
(Top View)
AVAILABLE AS MILITARY
SPECIFICATIONS
28-PIN SOJ (DCJ)
28-Pin DIP (C, CW)
32-Pin LCC (ECW)
•SMD 5962-88662
A14 1
28 VCC
•SMD 5962-88552
A12 2
A7 3
27 WE\
26 A13
4 3 2 1 32 31 30
•MIL-STD-883
FEATURES
m• Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns
• Battery Backup: 2V data retention
o• Low power standby
.c• High-performance, low-power CMOS double-metal process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\
• All inputs and outputs are TTL compatible
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
VSS
4
5
6
7
8
9
10
11
12
13
14
25 A8
24 A9
23 A11
22 OE\
21 A10
20 CE\
19 DQ8
18 DQ7
17 DQ6
16 DQ5
15 DQ4
A6
A5
A4
A3
A2
A1
A0
NC
DQ1
5
6
7
8
9
10
11
12
13
29 A8
28 A9
27 A11
26 NC
25 OE\
24 A10
23 CE\
22 DQ8
21 DQ7
14 15 16 17 18 19 20
28-Pin LCC (EC)
t4UOPTIONS
Timing
12ns access1
e15ns access1
20ns access
e25ns access
35ns access
h45ns access
55ns access2
S70ns access2
ta100ns access
MARKING
-12
-15
-20
-25
-35
-45
-55
-70
-100
28-Pin Flat Pack (F)
A14 1
A12 2
A7 3
A6 4
A5 5
A4 6
A3 7
A2 8
A1 9
A0 10
DQ1 11
DQ2 12
DQ3 13
VSS 14
3 2 1 28 27
28 VCC
27 WE\
26 A13
25 A8
24 A9
23 A11
22 OE\
21 A10
20 CE\
19 DQ8
18 DQ7
17 DQ6
16 DQ5
15 DQ4
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
4
5
6
7
8
9
10
11
12
26 A13
25 A8
24 A9
23 A11
22 OE\
21 A10
20 CE\
19 DQ8
18 DQ7
13 14 15 16 17
Package(s)3
aCeramic DIP (300 mil)
Ceramic DIP (600 mil)
Ceramic LCC (28 leads)
.DCeramic LCC (32 leads)
Ceramic LCC
Ceramic Flat Pack
wCeramic SOJ
C
CW
EC
ECW
ECJ
F
DCJ
No. 108
No. 110
No. 204
No. 208
No. 605
No. 302
No. 500
wOperating Temperature Ranges
Military -55oC to +125oC
mIndustrial -40oC to +85oC
XT
IT
w .co• 2V data retention/low power
L
t4UNOTES:
1. -12 available in IT only.
e2. Electrical characteristics identical to those provided for the
e45ns access devices.
h3. Plastic SOJ (DJ Package) is available on the AS5C2568 datasheet.
taSFor more products and information
aplease visit our web site at
.Dwww.austinsemiconductor.com
GENERAL DESCRIPTION
The Austin Semiconductor SRAM family employs
high-speed, low power CMOS designs using a four-transistor
memory cell. These SRAMs are fabricated using double-layer
metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications,
Austin Semiconductor offers chip enable (CE\) and output
enable (OE\) capability. These enhancements can place the
outputs in High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write
enable (WE\) and CE\ inputs are both LOW. Reading is
accomplished when WE\ remains HIGH and CE\ and OE\ go
LOW. The device offers a reduced power standby mode when
disabled. This allows system designs to achieve low standby
power requirements.
The “L” version provides a battery backup/low
voltage data retention mode, offering 2mW maximum power
dissipation at 2 volts. All devices operate from a single +5V
power supply and all inputs and outputs are fully TTL
compatible.
wwMT5C2568
wRev. 4.4 1/03
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1




Austin Semiconductor

MT5C2568 Datasheet Preview

MT5C2568 Datasheet

32K x 8 SRAM

No Preview Available !

Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
SRAM
MT5C2568
AS5C2568
A0
DECODER
256 x 1024
MEMORY ARRAY
Vcc
GND
A14
I/O0
I/O
DATA
CIRCUIT
I/O7
CE\
CONTROL
OE\ CIRCUIT
WE\
COLUMN I/O
9A128-1
TRUTH TABLE
MODE
STANDBY
READ
READ
WRITE
OE\ CE\ WE\ DQ POWER
X H X HIGH-Z STANDBY
L L H Q ACTIVE
H L H HIGH-Z ACTIVE
X L L D ACTIVE
MT5C2568
Rev. 4.4 1/03
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2


Part Number MT5C2568
Description 32K x 8 SRAM
Maker Austin Semiconductor
PDF Download

MT5C2568 Datasheet PDF






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