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Austin Semiconductor

MT5C2561 Datasheet Preview

MT5C2561 Datasheet

SRAM MEMORY ARRAY

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Austin Semiconductor, Inc.
SRAM
MT5C2561
256K x 1 SRAM
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-88725
• SMD 5962-88544
• MIL-STD-883
FEATURES
• High Speed: 35, 45, 55, and 70
• Battery Backup: 2V data retention
• Low power standby
• High-performance, low-power, CMOS double-metal
process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\
• All inputs and outputs are TTL compatible
OPTIONS
• Timingwww.DataSheet4U.com
35ns access
45ns access
55ns access
70ns access
MARKING
-35
-45
-55*
-70*
• Package(s)
Ceramic DIP (300 mil)
Ceramic LCC
C No. 106
EC No. 204
PIN ASSIGNMENT
(Top View)
24-Pin DIP (C)
(300 MIL)
A6 1
A7 2
A8 3
A9 4
A10 5
A11 6
A14 7
A15 8
A0 9
Q 10
WE\ 11
Vss 12
24 Vcc
23 A5
22 A4
21 A3
20 A2
19 A1
18 A17
17 A16
16 A13
15 A12
14 D
13 CE\
28-Pin LCC (EC)
NC 4
A9 5
A10 6
A11 7
A14 8
A15 9
A0 10
Q 11
NC 12
3 2 1 28 27
26 NC
25 A4
24 A3
23 A2
22 A1
21 A17
20 A16
19 A13
18 NC
13 14 15 16 17
• Operating Temperature Ranges
Industrial (-40oC to +85oC)
IT
Military (-55oC to +125oC)
XT
• 2V data retention/low power L
*Electrical characteristics identical to those provided for the 45ns
access devices.
For more products and information
please visit our web site at
www.austinsemiconductor.com
GENERAL DESCRIPTION
The Austin Semiconductor SRAM family employs
high-speed, low-power CMOS and are fabricated using double-
layer metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications,
Austin Semiconductor offers chip enable (CE\) on all organiza-
tions. This enhancement can place the outputs in High-Z for
additional flexibility in system design. The x1 configuration
features separate data input and output.
Writing to these devices is accomplished when write
enable (WE\) and CE\ inputs are both LOW. Reading is accom-
plished when WE\ remains HIGH and CE\ goes LOW. The
device offers a reduced power standby mode when disabled.
This allows system designs to achieve low standby power re-
quirements.
These devices operate from a single +5V power sup-
ply and all inputs and outputs are fully TTL compatible.
MT5C2561
Rev. 2.5 1/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1




Austin Semiconductor

MT5C2561 Datasheet Preview

MT5C2561 Datasheet

SRAM MEMORY ARRAY

No Preview Available !

Austin Semiconductor, Inc.
SRAM
MT5C2561
FUNCTIONAL BLOCK DIAGRAM
VCC GND
A13
A14
A15
A16
A17 262,144-BIT
A0 MEMORY ARRAY
A1
A2
A3
A4
D
Q
CE\
WE\
COLUMN DECODER
POWER
DOWN
A5 A6 A7 A8 A9 A10 A11 A12
TRUTH TABLE
MODE
STANDBY
READ
WRITE
CE\
H
L
L
WE\
X
H
L
DQ
HIGH-Z
Q
HIGH-Z
POWER
STANDBY
ACTIVE
ACTIVE
MT5C2561
Rev. 2.5 1/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2


Part Number MT5C2561
Description SRAM MEMORY ARRAY
Maker Austin Semiconductor
PDF Download

MT5C2561 Datasheet PDF






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