MT5C2561 Description
The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE) on all organizations. This enhancement can place the outputs in High-Z for additional flexibility in system design.
MT5C2561 Key Features
- High Speed: 35, 45, 55, and 70 Battery Backup: 2V data retention Low power standby High-performance, low-power, CMOS dou
- Single +5V (+10%) Power Supply
- Easy memory expansion with CE
- All inputs and outputs are TTL patible
- Timing 35ns access 45ns access 55ns access 70ns access
- Package(s) Ceramic DIP (300 mil) Ceramic LCC
- 35 -45 -55- -70
- Operating Temperature Ranges Industrial (-40oC to +85oC) IT Military (-55oC to +125oC) XT
- 2V data retention/low power L
MT5C2561 Applications
- Electrical characteristics identical to those provided for the 45ns access devices