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AS5SP512K18DQ - Plastic Encapsulated Microcircuit 9Mb

Description

ASI’s AS5SP512K18DQ is a 9.0Mb High Performance Synchronous Pipeline Burst SRAM, available in multiple temperature screening levels, fabricated using High Performance CMOS technology and is organized as a 512K x 18.

Features

  • Synchronous Operation in relation to the input Clock 2 Stage Registers resulting in Pipeline operation On chip address counter (base +3) for Burst operations Self-Timed Write Cycles On-Chip Address and Control Registers Byte Write support Global Write support On-Chip low power mode [powerdown] via ZZ pin Interleaved or Linear Bu.

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Datasheet Details

Part number AS5SP512K18DQ
Manufacturer Austin Semiconductor
File Size 318.27 KB
Description Plastic Encapsulated Microcircuit 9Mb
Datasheet download datasheet AS5SP512K18DQ Datasheet

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Other Datasheets by Austin Semiconductor

Part Number Description
AS5SP512K36DQ Plastic Encapsulated Microcircuit 18Mb
AS5SP128K32DQ Plastic Encapsulated Microcircuit 4.0Mb
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COTS PEM Austin Semiconductor, Inc.
Published: |