AS58LC1001 tolerant equivalent, 128k x 8 eeprom radiation tolerant.
High speed: 250ns and 300ns Data Retention: 10 Years z Low power dissipation, active current (20mW/MHz (TYP)), standby current (100μW(MAX)) z Single +3.3V +.3V power supp.
Data retention is specified for 10 years and erase/write endurance is guaranteed to a minimum of 10,000 cycles in the P.
The Austin Semiconductor, Inc. AS58LC1001 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits. The AS58LC1001 is capable or in system electrical Byte and Page reprogrammability. The AS58LC10.
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