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AS28F128J3A - x8 and x16 Q-FLASH Memory

General Description

ASI’s, AS28F128J3A Enhanced or Mil-Temp variant of Numonyx’s Q-Flash family of devices, is a nonvolatile, electrically block-erasable (FLASH), programmable memory device manufactured using Numonyx’s 0.15um process technology.

Key Features

  • 100% Pin and Function compatible to Intel’s MLC Family NOR Cell Architecture 2.7V to 3.6V VCC 2.7V to 3.6V or 5V VPEN (Programming Voltage) Asynchronous Page Mode Reads Manufacturer’s ID Code: 9 Numonyx 0x89h Industry Standard Pin-Out Fully compatible TTL Input and Outputs Common Flash Interface [CFI] Scalable Command Set Automa.

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Datasheet Details

Part number AS28F128J3A
Manufacturer Austin Semiconductor
File Size 223.39 KB
Description x8 and x16 Q-FLASH Memory
Datasheet download datasheet AS28F128J3A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AUSTIN SEMICONDUCTOR, INC. Austin Semiconductor, Inc. Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture FEATURES • • • • • • • • • • • • • • • • • 100% Pin and Function compatible to Intel’s MLC Family NOR Cell Architecture 2.7V to 3.6V VCC 2.7V to 3.6V or 5V VPEN (Programming Voltage) Asynchronous Page Mode Reads Manufacturer’s ID Code: 9 Numonyx 0x89h Industry Standard Pin-Out Fully compatible TTL Input and Outputs Common Flash Interface [CFI] Scalable Command Set Automatic WRITE and ERASE Algorithms 5.