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APM9930 - Dual-Channel MOSFET

Description

APM9930 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 S1 G1 S2 G2 APM9930C 1 2 3 4 8 7 6 5 D D D D P-Channel -20V/-5A, RDS(ON)=60mΩ(typ.) @ VGS=-10V RDS(ON)=72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V SO-8 D1 D1 SO-8 D Super High Dense Cell Design for Extremely

Features

  • N-Channel 20V/15A, RDS(ON)=12mΩ(typ. ) @ VGS=10V RDS(ON)=17mΩ(typ. ) @ VGS=4.5V RDS(ON)=25mΩ(typ. ) @ VGS=2.5V www. DataSheet4U. com.
  • Pin.

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Datasheet Details

Part number APM9930
Manufacturer Anpec Electronics Coropration
File Size 238.32 KB
Description Dual-Channel MOSFET
Datasheet download datasheet APM9930 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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APM9930/C Dual Enhancement Mode MOSFET (N-and P-Channel) Features • N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V RDS(ON)=25mΩ(typ.) @ VGS=2.5V www.DataSheet4U.com • Pin Description APM9930 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 S1 G1 S2 G2 APM9930C 1 2 3 4 8 7 6 5 D D D D P-Channel -20V/-5A, RDS(ON)=60mΩ(typ.) @ VGS=-10V RDS(ON)=72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V SO-8 D1 D1 SO-8 D • • • Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package S1 S1 S2 G1 G1 G2 N-Channel MOSFET Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G2 N- and P-Channel MOSFET S2 D2 D2 P-Channel MOSFET Ordering and Marking Information APM9930/C Handling Code Temp.
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