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A100N50X4 - Chip Termination

General Description

The A100N50X4 is high performance Aluminum Nitride (AlN) chip termination intended as an alternative to Beryllium Oxide (BeO).

The termination is well suited to all cellular frequency bands such as; AMPS, GSM, DCS, PCS, PHS and UMTS.

Key Features

  • RoHS Compliant.
  • 100 Watts.
  • DC - 2.7 GHz.
  • AlN Ceramic.
  • Non-Nichrome Resistive Element.
  • Low VSWR.
  • 100% Tested.
  • Small Size Resistive Element Substrate Terminal Finish Operating Temperature Thick film AlN Ceramic Matte Tin over Nickel Barrier -55 to +150°C (See de rating chart) Tolerance is ±0.010”, unless otherwise specified. Designed to meet of exceed applicable portions of MIL-E-5400. All dimensions in inches. Electrical.

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Datasheet Details

Part number A100N50X4
Manufacturer Anaren Microwave
File Size 257.33 KB
Description Chip Termination
Datasheet download datasheet A100N50X4 Datasheet

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Model A100N50X4 Chip Termination 100 Watts, 50Ω Description The A100N50X4 is high performance Aluminum Nitride (AlN) chip termination intended as an alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such as; AMPS, GSM, DCS, PCS, PHS and UMTS. The high power handling makes the part ideal for terminating circulators and for use in power combiners. The termination is also RoHS compliant! General Specifications Features: • RoHS Compliant • 100 Watts • DC - 2.7 GHz • AlN Ceramic • Non-Nichrome Resistive Element • Low VSWR • 100% Tested • Small Size Resistive Element Substrate Terminal Finish Operating Temperature Thick film AlN Ceramic Matte Tin over Nickel Barrier -55 to +150°C (See de rating chart) Tolerance is ±0.