A100N50X4
Overview
The A100N50X4 is high performance Aluminum Nitride (AlN) chip termination intended as an alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such as; AMPS, GSM, DCS, PCS, PHS and UMTS.
- RoHS Compliant
- 100 Watts
- DC - 2.7 GHz
- AlN Ceramic
- Non-Nichrome Resistive Element
- Low VSWR
- 100% Tested
- Small Size Resistive Element Substrate Terminal Finish Operating Temperature Thick film AlN Ceramic Matte Tin over Nickel Barrier -55 to +150°C (See de rating chart) Tolerance is ±0.010”, unless otherwise specified. Designed to meet of exceed applicable portions of MIL-E-5400. All dimensions in inches. Electrical Specifications Resistance Value: Power: Frequency Range: V.S.W.R. 50 Ohms, ± 2% 100 Watts DC - 2.7 GHz 1.1:1 to 2.7 GHz
