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Analog Power
AMR930N
Asymmetric Dual N-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • DC/DC Conversion
VDS (V) Q1 30
Q2 30
PRODUCT SUMMARY rDS(on) (mΩ)
9 @ VGS = 10V 15 @ VGS = 4.5V 3.5 @ VGS = 10V 5.8 @ VGS = 4.5V
DFN5X6-8L
ID (A) 14 11 22 17
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Q1 Limit Q2 Limit
Drain-Source Voltage
VDS 30
30
Gate-Source Voltage
VGS ±20 ±20
Continuous Drain Current a
Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TA=25°C TA=70°C
ID
14 11
20 16
IDM 50 50
IS 3.3 3.4
Power Dissipation a
TA=25°C TA=70°C
PD
2.5 1.6
2.5 1.
AMR930N Datasheet
