AM60N10-70P - MOSFET

Analog Power

Key Features

Low rDS(on) trench technology.
Low thermal impedance.
Fast switching speed Typical.

AM60N10-70P mosfet by Analog Power - Datasheet Preview

Datasheet Details

Part number	AM60N10-70P
Manufacturer	Analog Power
File Size	517.54 KB
Description	MOSFET
Datasheet	AM60N10-70P Datasheet

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Analog Power AM60N10-70P N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits PRODUCT SUMMARY rDS(on) (mΩ) 78 @ VGS = 10V 92 @ VGS = 5.5V VDS (V) 100 ID(A) 51a DRAIN connected to TAB ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 a TA=25°C ID 51 Continuous Drain Current IDM Pulsed Drain Current b 240 IS 90 Continuous Source Current (Diode Conduction) a a T =25°C P 300 Power Dissipation A D TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range www.DataSheet.co.