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AM3837P Datasheet Preview

AM3837P Datasheet

P-Channel MOSFET

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Analog Power
AM3837P
P-Channel 30-V (D-S) MOSFET With Schottky Diode
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
MOSFET PRODUCT SUMMARY
VDS (V)
rDS(on) (OHM)
ID (A)
-26.5
0.130 @ VGS = -4.5V
0.190 @ VGS = -2.5V
±2.5
±1.9
SCHOTTKY PRODUCT SUMMARY
VKA (V)
Vf (V)
Diode Forward Voltage
IF (A)
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
TSOP-6 saves board space
• Fast switching speed
• High performance trench technology
30
0.48V @ 1.0A
1.0
TSOP-6
Top View
SK
A1
S2
G3
6K
G
5 N/C
DA
4 D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame ter
Symbol Maximum Units
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (TJ=150oC) (MOSFET)a
TA=25oC
TA=70oC
Pulsed Drain Current (MOSFET)b
Continuous Source Current (MOSFET Diode Conduction)a
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
Maximum Power Dissipation (MOSFET)a
Maximum Power Dissipation (Schottky)a
TA=25oC
TA=70oC
TA=25oC
TA=70oC
Operating Junction and Storage Temperature Range
VDS
VKA
VGS
ID
IDM
IS
IF
IFM
PD
TJ, Tstg
-26.5
30
±12
±2.5
±1.9
±10
-1.6
0.5
8
1.15
0.7
1.0
0.6
-55 to 150
V
A
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 10 sec
Steady State
Symbol
RthJA
Typ
93
130
Max
110
150
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1 Publication Order Number:
DS-AM3837_B




Analog Power

AM3837P Datasheet Preview

AM3837P Datasheet

P-Channel MOSFET

No Preview Available !

Analog Power
AM3837P
MOSFET SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Parameter
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain CurrentA
Drain-Source On-State ResistanceA
Forward TranconductanceA
Diode Forward Voltage
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Symbol
Test Conditions
Min
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = -250 uA
VDS = 0 V, VGS = +/-12 V
VDS = -21 V, VGS = 0 V
VDS = -21 V, VGS = 0 V, TJ = 55oC
VDS = -5 V, VGS = -4.5 V
VGS = -4.5 V, ID = -2.5 A
VGS = -2.5 V, ID = -1.9 A
VDS = -5 V, ID = -2.5 A
IS = -1.6 A, VGS = 0 V
-1.0
-5
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = -5 V, VGS = -4.5 V,
ID = -2.5 A
VDD = -5 V, RL = 5 OHM,
VGEN = -4.5 V, RG = 6 OHM
Limits
Typ Max
Unit
3
-0.70
±100
-1
-10
0.130
0.190
nA
uA
A
S
V
6.0
0.80 nC
1.30
6.5
20
31
ns
21
SCHOTTKY SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Forward Voltage Drop
Maximum Reverse Leakage Current
VF
Irm
IF = 0.5 A
IF = 0.5 A, TJ = 125oC
Vr = 30 V
Vr = 30 V, TJ = 75oC
Vr = 30 V, TJ = 125oC
Junction Capacitance
CT Vr = 10 V
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Min
Limits
Typ Max
0.48
0.4
0.1
1
10
31
Unit
V
V
mA
pF
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of
the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential
or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different
applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products
are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal
injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall
indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an
Equal Opportunity/Affirmative Action Employer.
PRELIMINARY
2 Publication Order Number:
DS-AM3837_B


Part Number AM3837P
Description P-Channel MOSFET
Maker Analog Power
Total Page 5 Pages
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