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AM2318N - N-Channel MOSFET

Key Features

  • Low rDS(on) trench technology.
  • Low thermal impedance.
  • Fast switching speed Typical.

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Datasheet Details

Part number AM2318N
Manufacturer Analog Power
File Size 264.71 KB
Description N-Channel MOSFET
Datasheet download datasheet AM2318N Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Analog Power N-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM2318N VDS (V) 30 PRODUCT SUMMARY rDS(on) (mΩ) 160 @ VGS = 10V 250 @ VGS = 4.5V ID (A) 2.4 1.9 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 2.4 1.9 10 1.9 Power Dissipation a TA=25°C TA=70°C PD 1.3 0.