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Analog Power
N-Channel 300-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
• Low rDS(on) provides higher efficiency and extends battery life
• Low thermal impedance copper leadframe DPAK saves board space
• Fast switching speed • High performance trench technology
AM10N30-600I
PRODUCT SUMMARY
VDS (V)
rDS(on) (mΩ)
300 600 @ VGS = 10V 900 @ VGS = 5.5V
ID (A) 7.5 6.