LTC7890 Key Features
- GaN drive technology fully optimized for GaN FETs
- Wide VIN range: 4 V to 100 V
- Wide output voltage range: 0.8 V ≤ VOUT ≤ 60 V
- No catch, clamp, or bootstrap diodes needed
- Internal smart bootstrap switches prevent overcharging of high
- Internally optimized, smart near zero dead times or resistor
- Split output gate drivers for adjustable turn on and turn off driver
- Accurate adjustable driver voltage and UVLO
- Low IQ: 5 μA (48 VIN to 5 VOUT, Ch 1 On)
- Programmable frequency (100 kHz to 3 MHz)