LTC7890 Datasheet | Analog Devices

Features - Ga N drive technology fully optimized for Ga N FETs - Wide VIN range: 4 V to 100 V - Wide output voltage range: 0.8 V ≤ VOUT ≤ 60 V - No catch, clamp, or bootstrap diodes needed - Internal smart bootstrap switches prevent overcharging of high- side driver supplies - Internally optimized, smart near zero dead times or resistor adjustable dead times - Split output gate drivers for adjustable turn on and turn off driver strengths - Accurate adjustable driver voltage and UVLO - Low IQ: 5 μA (48 VIN to 5 VOUT, Ch 1 On) - Programmable frequency (100 k Hz to 3 MHz) - Synchronizable frequency (100 k Hz to 3 MHz) - Spread spectrum frequency modulation - 40-lead (6 mm × 6 mm), side wettable, QFN package APPLICATIONS - Industrial power systems - Military avionics and medical systems - Telemunications power systems GENERAL DESCRIPTION The LTC7890 is a high performance, dual step-down, dc-to-dc switching regulator controller that drives all N-channel synchronous gallium nitride (Ga N) field effect transistor (FET) power stages from input voltages up to 100 V. The LTC7890 solves many of the challenges traditionally faced when using Ga N FETs. The LTC7890 simplifies the application design while requiring no protection diodes and no other additional external ponents pared to a silicon metal-oxide semiconductor field effect transistor (MOSFET) solution. The internal smart bootstrap switches prevent overcharging of the BOOSTx pin to the SWx pin high-side driver supplies during dead times, protecting the gate of the top Ga N FET. The LTC7890 internally optimizes the gate driver timing on both switching edges to achieve smart near zero dead times, significantly improving efficiency and allowing for high frequency operation, even at high input voltages. Alternatively, the user can adjust the dead times with external resistors for margin or to tailor the application. The gate drive voltage of the LTC7890 can be precisely adjusted from 4 V to 5.5 V to optimize performance and to...