HMC817LP4E
HMC817LP4E is SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER manufactured by Analog Devices.
Features
Noise Figure: 0.5 d B
- Cellular/3G and LTE/Wi MAX/4G
Gain: 16 d B
- BTS & Infrastructure
Output IP3: +37 d Bm
- Repeaters and Femtocells
Single Supply: +3V to +5V
- Multi-Channel Applications
- Access Points
OLETE Functional Diagram
50 Ohm Matched Input/Output
24 Lead 4x4mm QFN Package: 16 mm2
General Description
The HMC817LP4E is a Ga As p HEMT Dual Channel Low Noise Amplifier that is ideal for Cellular/3G and LTE/Wi MAX/4G basestation front-end receivers operating between 550 and 1200 MHz. The amplifier has been optimized to provide 0.5 d B noise figure, 24 d B gain and +37 d Bm output IP3 from a single supply of +5V. Input and output return losses are excellent with minimal external matching and bias decoupling ponents. The HMC817LP4E shares the same package and pinout with the HMC816LP4E and HMC818LP4E LNAs. The HMC817LP4E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of each channel of the LNA for each application.
S Electrical Specifications, TA = +25° C,
Rbias 1, 2 = 10k Ohms- Vdd = Vdd1 = Vdd2 = +5V, Idd = Idd1 = Idd2
B Parameter O Frequency Range
Vdd = +3 V
Min. Typ. Max. Min. Typ. Max.
- 960
- 1200
Vdd = +5 V
Min. Typ. Max. Min. Typ. Max.
- 960
- 1200
Units MHz
Gain
13.5 16
11.5 16 d B
Gain Variation Over...
