HMC817LP4E Overview
Key Specifications
Package: QFN
Pins: 24
Operating Voltage: 5 V
Max Operating Temp: 85 °C
Description
The HMC817LP4E is a GaAs pHEMT Dual Channel Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 550 and 1200 MHz. The amplifier has been optimized to provide 0.5 dB noise figure, 24 dB gain and +37 dBm output IP3 from a single supply of +5V.
Key Features
- Cellular/3G and LTE/WiMAX/4G Gain: 16 dB
- BTS & Infrastructure Output IP3: +37 dBm
- Repeaters and Femtocells Single Supply: +3V to +5V
- Multi-Channel Applications
- Access Points OLETE Functional Diagram 50 Ohm Matched Input/Output 24 Lead 4x4mm QFN Package: 16 mm2
