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HMC753 - MMIC Low Noise Amplifier

General Description

The HMC753 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), low noise, wideband amplifier housed in a leadless, 4 mm × 4 mm LFCSP.

Key Features

  • Noise figure: 1.5 dB at 4 GHz (see Figure 10) Gain 16.5 dB at 1 GHz to 6 GHz 14 dB at 6 GHz to 11 GHz Output power for 1 dB compression (P1dB): 18 dBm at 1 GHz to 6 GHz Supply voltage (VDD): 5 V at 55 mA Output third-order intercept (IP3): 30 dBm at 1 GHz to 6 GHz 50 Ω matched input/output (I/O) 24-lead lead frame chip scale package (LFCSP): 16 mm2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet FEATURES Noise figure: 1.5 dB at 4 GHz (see Figure 10) Gain 16.5 dB at 1 GHz to 6 GHz 14 dB at 6 GHz to 11 GHz Output power for 1 dB compression (P1dB): 18 dBm at 1 GHz to 6 GHz Supply voltage (VDD): 5 V at 55 mA Output third-order intercept (IP3): 30 dBm at 1 GHz to 6 GHz 50 Ω matched input/output (I/O) 24-lead lead frame chip scale package (LFCSP): 16 mm2 APPLICATIONS Point to point radios Point to multipoint radios Military and space Test instrumentation GENERAL DESCRIPTION The HMC753 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), low noise, wideband amplifier housed in a leadless, 4 mm × 4 mm LFCSP. The amplifier operates between 1 GHz and 11 GHz, providing up to 16.5 dB of small signal gain at 1 GHz to 6 GHz, a 1.