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HMC734LP5 - MMIC VCO

Description

The HMC734LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO.

Features

  • Dual Output: Fo = 8.6 - 10.2 GHz Fo/4 = 2.15 - 2.55 GHz Pout: +18 dBm Phase Noise: -100 dBc/Hz @ 100 kHz Typ. No External Resonator Needed 32 Lead 5x5mm SMT Package: 25mm2 General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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v03.0609 Typical Applications The HMC734LP5(E) is ideal for: • Point-to-Point/Multi-Point Radio • Test Equipment & Industrial Controls • SATCOM • Military End-Use Functional Diagram 8 HMC734LP5 / 734LP5E MMIC VCO w/ DIVIDE-BY-4 8.6 - 10.2 GHz Features Dual Output: Fo = 8.6 - 10.2 GHz Fo/4 = 2.15 - 2.55 GHz Pout: +18 dBm Phase Noise: -100 dBc/Hz @ 100 kHz Typ. No External Resonator Needed 32 Lead 5x5mm SMT Package: 25mm2 General Description The HMC734LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC734LP5(E) integrates a resonator, negative resistance device, varactor diode and features a divide-by-4 frequency output. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure.
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