HMC7149 Datasheet Summary
HMC7149 v
10 WATT GaN MMIC POWER AMPLIFIER, 6
- 18 GHz
AMPLIFIERS
- LINEAR & POWER
- CHIP
Typical Applications
The HMC7149 is ideal for:
- Test Instrumentation
- General munications
- Radar
Functional Diagram
Features
High Psat: +40 dBm
Power Gain at Psat: +10 dB
High Output IP3: +39.5 dBm
Small Signal Gain: 20 dB
Supply Voltage: +28 V @ 680 mA
50 Ohm Matched Input/Output Die Size: 3.4 x 4.5 x 0.1 mm
General Description
The HMC7149 is an 10W Gallium Nitride (GaN) MMIC Power Amplifier which operates between 6 and 18 GHz. The amplifier typically provides 20dB of small signal gain, +40 dBm of saturated output power, and +39.5 dBm output IP3 at +28 dBm output power per tone. The HMC7149 draws 680 mA current from a +28V DC supply. The RF I/Os are matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All electrical performance data was aquired with the die eutectically attached to 1.02 mm (40 mil) thick CuMo carrier with multiple 1.0 mil diameter ball bonds connecting the die to 50 Ohm transmission lines on alumina.
Electrical Specifications, Tc = +25°C, Vdd= Vdd1 =Vdd2 = +28 V, Idd = 680 mA [1]
Parameter Frequency Range Small Signal Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 4 dB pression (P4dB) Power Gain for 4 dB pression (P4dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) [2] Power Added Efficiency
Supply Current (Idd @ Vdd = 28V)
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
6
- 10
10
-...