HMC637BPM5E amplifier equivalent, 1w power amplifier.
P1dB output power: 28 dBm typical Gain: 15.5 dB typical Output IP3: 39 dBm typical Self biased at VDD = 12 V at 345 mA typical
Optional bias control on VGG1 for IDQ adjus.
Military and space Test instrumentation
GENERAL DESCRIPTION
The HMC637BPM5E is a gallium arsenide (GaAs), monolithic mic.
The HMC637BPM5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), cascode distributed power amplifier. The device is self biased in normal operation and features opt.
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