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HMC636ST89 - GaAs pHEMT

Description

The HMC636ST89(E) is a GaAs pHEMT, High Linearity, Low Noise, Wideband Gain Block Amplifier covering 0.2 to 4.0 GHz.

Features

  • Low Noise Figure: 2.2 dB High P1dB Output Power: +22 dBm High Output IP3: +40 dBm Gain: 13 dB 50 Ohm I/O’s - No External Matching Industry Standard SOT89 Package General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz Typical Applications The HMC636ST89(E) is ideal for: • Cellular / PCS / 3G • WiMAX, WiBro, & Fixed Wireless • CATV & Cable Modem 9 • Microwave Radio Functional Diagram Features Low Noise Figure: 2.2 dB High P1dB Output Power: +22 dBm High Output IP3: +40 dBm Gain: 13 dB 50 Ohm I/O’s - No External Matching Industry Standard SOT89 Package General Description The HMC636ST89(E) is a GaAs pHEMT, High Linearity, Low Noise, Wideband Gain Block Amplifier covering 0.2 to 4.0 GHz. Packaged in an industry standard SOT89, the amplifier can be used as either a cascadable 50 Ohm gain stage, a PA Pre-Driver, a Low Noise Amplifier, or a Gain Block with up to +23 dBm output power.
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