HMC582LP5 Description
The HMC582LP5 & HMC582LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC582LP5 & HMC582LP5E integrate resona- tors, negative resistance devices, varactor diodes.
HMC582LP5 Key Features
- 12.4 GHz Fo/2 = 5.55
- 6.2 GHz Fo/4 = 2.78
- 3.1 GHz
- 12.4 5.55
- 12.4 GHz
HMC582LP5 Applications
- Point to Point/Multipoint Radio