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HMC457QS16GE Datasheet, Analog Devices

HMC457QS16GE hbt equivalent, ingap hbt.

HMC457QS16GE Avg. rating / M : 1.0 rating-12

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HMC457QS16GE Datasheet

Features and benefits

Output IP3: +46 dBm Gain: 27 dB @ 1900 MHz 48% PAE @ +32 dBm Pout +25 dBm W-CDMA Channel Power @ -50 dBc ACPR Integrated Power Control (Vpd) QSOP16G SMT Package: 29.4 mm2.

Application

The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier:
* CDMA & W-CDMA <.

Description

The HMC457QS16G & HMC457QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifiers operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typic.

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TAGS

HMC457QS16GE
InGaP
HBT
Analog Devices

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