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HMC413QS16GE Datasheet, Analog Devices

HMC413QS16GE amplifier equivalent, gaas ingap hbt mmic power amplifier.

HMC413QS16GE Avg. rating / M : 1.0 rating-13

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HMC413QS16GE Datasheet

Features and benefits

Gain: 23 dB Saturated Power: +29.5 dBm 42% PAE Supply Voltage: +2.75V to +5V Power Down Capability Low External Part Count Included in the HMC-DK002 Designer’s Kit Genera.

Application

This amplifier is ideal for use as a power/driver amplifier for 1.6 - 2.2 GHz applications:
* Cellular / PCS / 3G

Description

The HMC413QS16G & HMC413QS16GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an expose.

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TAGS

HMC413QS16GE
GaAs
InGaP
HBT
MMIC
POWER
AMPLIFIER
Analog Devices

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