HMC349AMS8G switch equivalent, spdt switch.
Nonreflective, 50 Ω design High isolation: 57 dB to 2 GHz Low insertion loss: 0.9 dB to 2 GHz High input linearity
1 dB power compression (P1dB): 34 dBm typical Third-ord.
Cellular/4G infrastructure Wireless infrastructure Mobile radios Test equipment
GENERAL DESCRIPTION
The HMC349AMS8G is a.
The HMC349AMS8G is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz.
The HMC349AMS8G is well suited for cellular infrastructure applications by.
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