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HMC-ALH435 - GaAs HEMT MMIC LOW NOISE AMPLIFIER

Description

The HMC-ALH435 is a GaAs MMIC HEMT Low Noise Wideband Amplifier die which operates between 5 and 20 GHz.

The amplifier provides 13 dB of gain, 2.2 dB noise figure at 12 GHz and +16 dBm of output power at 1 dB gain compression while requiring only 30 mA from a +5V supply voltage.

Features

  • Noise Figure: 2.2 dB @ 12 GHz Gain: 13 dB @ 14 GHz P1dB Output Power: +16 dBm @ 12 GHz Supply Voltage: +5V @ 30 mA Die Size: 1.48 x 0.9 x 0.1 mm General.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LOW NOISE AMPLIFIERS - CHIP v03.1009 1 Typical Applications This HMC-ALH435 is ideal for: • Wideband Communication Systems • Surveillance Systems • Point-to-Point Radios • Point-to-Multi-Point Radios • Military & Space • Test Instrumentation • VSAT Functional Diagram HMC-ALH435 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 5 - 20 GHz Features Noise Figure: 2.2 dB @ 12 GHz Gain: 13 dB @ 14 GHz P1dB Output Power: +16 dBm @ 12 GHz Supply Voltage: +5V @ 30 mA Die Size: 1.48 x 0.9 x 0.1 mm General Description The HMC-ALH435 is a GaAs MMIC HEMT Low Noise Wideband Amplifier die which operates between 5 and 20 GHz. The amplifier provides 13 dB of gain, 2.2 dB noise figure at 12 GHz and +16 dBm of output power at 1 dB gain compression while requiring only 30 mA from a +5V supply voltage.
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