HMC-ABH209 Datasheet | Analog Devices

Features Output IP3: +25 d Bm P1d B: +16 d Bm Gain: 13 d B Supply Voltage: +5V 50 Ohm Matched Input/Output Die Size: 2.2 x 1.22 x 0.1 mm Functional Diagram General Description The HMC-ABH209 is a high dynamic range, two stage Ga As HEMT MMIC Medium Power Amplifier which operates between 55 and 65 GHz. The HMCABH209 provides 13 d B of gain, and an output power of +16 d Bm at 1 d B pression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-ABH209 Ga As HEMT MMIC Medium Power Amplifier is patible with conventional die attach methods, as well as thermopression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifications, TA = +25 °C, Vdd = 5V, Idd = 80m A [2] Parameter Min. Typ. Frequency Range - 65 Gain 12 13 Input...